OVERVIEW Developments in nanoelectronics and nanoscale surface modification have continued to drive the need for more elegant and reliable bottom-up area selective deposition (ASD) strategies. Most notably, the semiconductor industry has relentlessly pursued sub-10 nm transistor fabrication for next-generation devices, an endeavor that increasingly relies on selective deposition techniques to facilitate proper material alignment. However, other fields beyond traditional transistor fabrication have also found potential applications for selective deposition. Mixed-material catalysts have consistently shown the benefits of having site-specific material growth, but new optical devices and materials for energy storage have also contributed to an increased focus on developing new strategies for ASD. In an effort to help facilitate the progression of ASD techniques, the 7th Area Selective Deposition Workshop (ASD 2023) will be held on April 2-5, 2023 in Incheon National University, Incheon,Ko


COMMITTEE PROGRAM CHAIR Prof. Han-Bo-Ram (Boram) Lee http://nanomaterial.kr PROGRAM COMMITTEE Rudy J. Wojtecki (IBM), ASD2022 Chair Stacey F. Bent (Stanford University), ASD2020 Chair Annelies Delabie (imec), ASD2016 Chair John G. Ekerdt (University of Texas), ASD2021 Chair Dennis Hausmann (Lam Research) Erwin Kessels (Eindhoven University of Technology) Adrie Mackus (Eindhoven University of Technology), ASD2017 Chair Ravi Kanjolia (EMD Electronics) Gregory Parsons (North Carolina State University), ASD2018 Chair Robert Clark (TEL) Mark Saly (Applied Materials) Sean Barry (Carleton University) Han-Bo-Ram Lee (Incheon National University), ASD2023 Chair Marko Tuominen (ASM) Sudipto Naskar (Intel) Anuja DaSilva (Lam Research) Kristen Colwell (Intel) Seung Wook Ryu (SK hynix) Keyvan Kashefi (Applied Materials)


 INVITED SPEAKERS Tutorial for ASD Fundamentals (April 2nd) Prof. Gregory Parsons, North Carolina State University, USA "ASD by intrinsic surface properties"  Prof. Sean Barry, Carleton University, Canada "Find 10 Differences Between These Precursors:ALD vs ASD Surface Chemistry"  Prof. Adrie Mackus, Eindhoven University of Technology, Netherlands "ASD by Passivation: from Self-assembled Monolayers to Small Molecule Inhibitors"


  Technical Program (PDF) updated March 24 April 2nd, Sunday: Tutorial for ASD Time Event Lecture & Title Location 13:00-13:55 Registration 3rd floor, Faculty Bldg 13:55-14:00 Opening 3rd floor, Faculty Bldg 14:00-14:50 Class 1 Prof. Greg Parsons "ASD by intrinsic surface properties" 3rd floor, Faculty Bldg 14:50-15:00 Break 3rd floor, Faculty Bldg 15:00-15:50 Class 2 Prof. Adrie Mackus "ASD by Passivation: from Self-assembled Monolayers to Small Molecule Inhibitors" 3rd floor, Faculty Bldg 15:50-16:00 Break 3rd floor, Faculty Bldg 16:00-16:50 Class 3 Prof. Sean Barry "Find 10 Differences Between These Precursors ALD vs ASD Surface Chemistry" 3rd floor, Faculty Bldg 16:50-20-00 Reception 1st floor, Faculty Bldg April 3nd, Monday: ASD Workshop Day 1 Time Event Session Topic & Moderator Location 09:00-09:05 Opening Remark Conference Chair Auditorium 09:05-10:10 Session 1 Methodology Auditorium 10:10-10:30 Break Lobby 10:30-12:00 Session 2 Theory &