SCHEDULE

-

 Technical Program (PDF) updated March 24



  • April 2nd, Sunday: Tutorial for ASD

Time

Event

Lecture & Title

Location

13:00-13:55

Registration


3rd floor, Faculty Bldg

13:55-14:00

Opening


3rd floor, Faculty Bldg

14:00-14:50

Class 1

Prof. Greg Parsons "ASD by intrinsic surface properties"

3rd floor, Faculty Bldg

14:50-15:00

Break


3rd floor, Faculty Bldg

15:00-15:50

Class 2

Prof. Adrie Mackus "ASD by Passivation: from Self-assembled

Monolayers to Small Molecule Inhibitors"

3rd floor, Faculty Bldg

15:50-16:00

Break


3rd floor, Faculty Bldg

16:00-16:50

Class 3

Prof. Sean Barry

"Find 10 Differences Between These Precursors

ALD vs ASD Surface Chemistry"

3rd floor, Faculty Bldg

16:50-20-00

Reception


1st floor, Faculty Bldg



  • April 3nd, Monday: ASD Workshop Day 1

Time

Event

Session Topic & Moderator

Location

09:00-09:05

Opening Remark

Conference Chair

Auditorium

09:05-10:10

Session 1

Methodology

Auditorium

10:10-10:30

Break


Lobby

10:30-12:00

Session 2

Theory & Calculation

Auditorium

12:00-13:30

Lunch


1st floor, Faculty Bldg

13:30-15:05

Session 3

Methodology

Auditorium

15:05-15:25

Break


Lobby

15:25-17:00

Session 4

Applications

Auditorium

17:00-20:00

Poster, Networking,Dinner


1st floor, Faculty Bldg



  • April 4nd, Tuesday: ASD Workshop Day 2

Time

Event

Session Topic & Moderator

Location

09:00-09:05

Opening Remark

Conference Chair

Auditorium

09:05-10:10

Session 1

Analysis & Mechanism

Auditorium

10:10-10:30

Break


Lobby

10:30-12:00

Session 2

Inhibitors

Auditorium

12:00-13:30

Lunch


1st floor, Faculty Bldg

13:30-15:05

Session 3

Methodology

Auditorium

15:05-15:25

Break


Lobby

15:25-16:35

Session 4

Analysis & Mechanism

Auditorium

16:35-16:55

Break


Lobby

16:55-17:30

Panel Discussion

"Challenges for extending ASD into 3D Structures"

Prof. Greg Parsons

Auditorium

17:30-17:40

Closing Remark

Conference Chair

Auditorium



  • April 5th, Wednesday: Special Session, "ALD for Semiconductors"

Time

Event

Session Topic & Moderator

Location

08:50-09:00

Opening Remark

Conference Chair

Auditorium

09:00-10:20

Session S1

Dr. Sang Ick Lee, VP of Technology, DNF, Korea

Dr. Seiyon Kim, Fellow, Sk hynix, Korea

Auditorium

10:20-10:40

Break


Lobby

10:40-12:00

Session S2

Dr. Zhebo Chen, Director of Global Product Management, Applied Materials, USA

Prof. Anjana Devi, Ruhr-Universität Bochum, Germany

Auditorium

12:00-13:30

Lunch


1st floor, Faculty Bldg

13:30-14:50

Session S3

Prof. Kuan-Neng Chen, National Yang Ming Chiao Tung University, Taiwan

Prof. Hyungjun Kim, Yonsei University, Korea

Auditorium

14:50-15:10

Break


Lobby

15:10-16:30

Session S4

Dr. Hanjin Lim, VP of Technology, Samsung Electronics, Korea

Dr. Tomonari Yamamoto, Vice President, TEL, Japan

Auditorium

16:30-16:40

Closing Remark

Conference Chair

Auditorium

댓글

댓글 쓰기

이 블로그의 인기 게시물

OVERVIEW

-
OVERVIEW Developments in nanoelectronics and nanoscale surface modification have continued to drive the need for more elegant and reliable bottom-up area selective deposition (ASD) strategies. Most notably, the semiconductor industry has relentlessly pursued sub-10 nm transistor fabrication for next-generation devices, an endeavor that increasingly relies on selective deposition techniques to facilitate proper material alignment. However, other fields beyond traditional transistor fabrication have also found potential applications for selective deposition. Mixed-material catalysts have consistently shown the benefits of having site-specific material growth, but new optical devices and materials for energy storage have also contributed to an increased focus on developing new strategies for ASD. In an effort to help facilitate the progression of ASD techniques, the 7th Area Selective Deposition Workshop (ASD 2023) will be held on April 2-5, 2023 in Incheon National University, Incheon,Ko
자세한 내용 보기

INVITED SPEAKERS

-
이미지
 INVITED SPEAKERS Tutorial for ASD Fundamentals (April 2nd) Prof. Gregory Parsons, North Carolina State University, USA "ASD by intrinsic surface properties"  Prof. Sean Barry, Carleton University, Canada "Find 10 Differences Between These Precursors:ALD vs ASD Surface Chemistry"  Prof. Adrie Mackus, Eindhoven University of Technology, Netherlands "ASD by Passivation: from Self-assembled Monolayers to Small Molecule Inhibitors"
자세한 내용 보기