INVITED SPEAKERS

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 INVITED SPEAKERS



Tutorial for ASD Fundamentals (April 2nd)

Prof. Gregory Parsons, North Carolina State University, USA
"ASD by intrinsic surface properties"

 Prof. Sean Barry, Carleton University, Canada
"Find 10 Differences Between These Precursors:ALD vs ASD Surface Chemistry" 
Prof. Adrie Mackus, Eindhoven University of Technology, Netherlands
"ASD by Passivation: from Self-assembled Monolayers to Small Molecule Inhibitors"
















ASD2023 Workshop (April 3rd-4th)


Prof. Rong Chen, Huazhong University of Science and Technology, China
"Surface reaction kinetics for Inherent Selective Atomic Layer Deposition"
Prof. Ralf Tonner-zech, Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Germany
"Small molecule inhibitor-based approaches for area-selective deposition from first principles"
Dr. Marc Merkx, Eindhoven University of Technology, Netherlands "The mechanisms of precursor blocking during area-selective ALD using small molecule inhibitors"
Dr. Eun Hyoung Cho, Samsung Advanced Institute of Technology, Korea 
"Study on fabrication of seam-less gap filling through controlling of surface reactions in 3D structures"
Prof. Matthias Young, University of Missouri, USA
"Area selective atomic layer deposition enabled by writeable functional group patterning"
Prof. Soo Hyun Kim, UNIST, Korea
"Selectively grown ALD-ZnO bottomless barrier for  Advanced Cu Metallization"
Prof. Mike Filler, Georgia Tech, USA
"Area Selective Deposition for Bottom-up Nanoelectronic Device Synthesis"
Dr. Keith Wong, Applied Materials, USA
"Strategies for Area-Selective Deposition at an Industrial Scale"
Dr. Rachel Nye, Lam Research, USA
"Self-Assembling Monolayers vs Small Molecule Inhibitors in Area-Selective Deposition"
Dr. Sang Hoon Ahn, Samsung Electronics, Korea
"Area selective dielectric deposition beyond the scaling limit"
Dr. Dina Triyoso, TEL, USA
"Selective Deposition for Fully Self-Aligned Via: progress, challenges and opportunities"
















Special Session, "ALD for Semiconductors" (April 5th)




Prof. Hyungjun Kim, Yonsei University, Korea
"ALD for 2D TMDCs and Other Related Emerging Materials"





Dr. Seiyon Kim, Fellow, SK hynix, Korea
"ALD Technology for Disruptive Semiconductor Devices : Evolutionary to Revolutionary Paths"
Dr. Zhebo Chen, Director of Global Product Management, Applied Materials, USA
"Enabling Advanced Metallization with Selective Deposition"
Dr. Hanjin Lim, VP of Technology, Samsung Electronics, Korea "The Application of Selective Area Deposition in the 3D Semiconductor Structure"
Dr. Sang Ick Lee, VP of Technology, DNF, Korea 
"Precursor Design Concept for Semiconductor and Display Process"
Dr. Tomonari Yamamoto, Vice President, TEL, Japan
"Enabling Process Technologies for Continuous Logic Scaling Towards 2-nm-node and Beyond"
Prof. Kuan-Neng Chen, National Yang Ming Chiao Tung University, Taiwan
"3DIC Introduction and What Can ALD Do in 3DIC"
Prof. Anjana Devi, Ruhr-Universität Bochum, Germany
"Ligand Engineering: Gateway to New Precursors for Atomic Layer Processing"








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OVERVIEW

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OVERVIEW Developments in nanoelectronics and nanoscale surface modification have continued to drive the need for more elegant and reliable bottom-up area selective deposition (ASD) strategies. Most notably, the semiconductor industry has relentlessly pursued sub-10 nm transistor fabrication for next-generation devices, an endeavor that increasingly relies on selective deposition techniques to facilitate proper material alignment. However, other fields beyond traditional transistor fabrication have also found potential applications for selective deposition. Mixed-material catalysts have consistently shown the benefits of having site-specific material growth, but new optical devices and materials for energy storage have also contributed to an increased focus on developing new strategies for ASD. In an effort to help facilitate the progression of ASD techniques, the 7th Area Selective Deposition Workshop (ASD 2023) will be held on April 2-5, 2023 in Incheon National University, Incheon,Ko
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SCHEDULE

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  Technical Program (PDF) updated March 24 April 2nd, Sunday: Tutorial for ASD Time Event Lecture & Title Location 13:00-13:55 Registration 3rd floor, Faculty Bldg 13:55-14:00 Opening 3rd floor, Faculty Bldg 14:00-14:50 Class 1 Prof. Greg Parsons "ASD by intrinsic surface properties" 3rd floor, Faculty Bldg 14:50-15:00 Break 3rd floor, Faculty Bldg 15:00-15:50 Class 2 Prof. Adrie Mackus "ASD by Passivation: from Self-assembled Monolayers to Small Molecule Inhibitors" 3rd floor, Faculty Bldg 15:50-16:00 Break 3rd floor, Faculty Bldg 16:00-16:50 Class 3 Prof. Sean Barry "Find 10 Differences Between These Precursors ALD vs ASD Surface Chemistry" 3rd floor, Faculty Bldg 16:50-20-00 Reception 1st floor, Faculty Bldg April 3nd, Monday: ASD Workshop Day 1 Time Event Session Topic & Moderator Location 09:00-09:05 Opening Remark Conference Chair Auditorium 09:05-10:10 Session 1 Methodology Auditorium 10:10-10:30 Break Lobby 10:30-12:00 Session 2 Theory &
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